{"id":36634,"date":"2025-05-21T23:30:00","date_gmt":"2025-05-21T23:30:00","guid":{"rendered":"https:\/\/www.prnasia.com\/story\/archive\/4693150_CN93150_0"},"modified":"2025-05-21T23:30:00","modified_gmt":"2025-05-21T23:30:00","slug":"sk-hynix-develops-ufs-4-1-solution-based-on-321-high-nand","status":"publish","type":"post","link":"https:\/\/transmediavictoria.net.au\/?p=36634","title":{"rendered":"SK hynix Develops UFS 4.1 Solution Based on 321-High NAND"},"content":{"rendered":"<div id=\"dvContent\" readability=\"84.629719431936\">\n<ul type=\"disc\">\n<li><b>Optimized for on-device AI with best-in-class <span id=\"spanHghlt0fdd\">sequential reading<\/span> performance, low power requirement<\/b><\/li>\n<li><b>Thickness reduced by 15% to fit into ultra-slim flagship smartphones<\/b><\/li>\n<li><b>Portfolio with world&#8217;s highest 321-layer product to enhance SK hynix&#8217;s leadership as full stack AI memory provider<\/b><\/li>\n<\/ul>\n<p><span class=\"legendSpanClass\"><span class=\"xn-location\">SEOUL, South Korea<\/span>, May 22, 2025 \/PRNewswire\/ &#8212; SK hynix Inc. (or &#8220;the company&#8221;, <a href=\"https:\/\/www.skhynix.com\/eng\/main.do\" target=\"_blank\" rel=\"nofollow noopener\">www.skhynix.com<\/a>) announced today that it has developed UFS 4.1 solution product adopting the world&#8217;s highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications.<\/span><\/p>\n<div class=\"PRN_ImbeddedAssetReference\" id=\"DivAssetPlaceHolder1\">\n<p> <a href=\"https:\/\/mma.prnasia.com\/media2\/2692857\/IMG_5726.html\" target=\"_blank\" rel=\"nofollow noopener\"> <img decoding=\"async\" src=\"https:\/\/mma.prnasia.com\/media2\/2692857\/IMG_5726.jpg?p=medium600\" title alt> <\/a> <br \/><span><\/span><\/p>\n<\/p><\/div>\n<p>The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.<\/p>\n<p>With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device.<\/p>\n<p>The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim <span id=\"spanHghlt819a\">smartphone<\/span>.<\/p>\n<p>The product also supports data transfer speed of 4300MB\/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively.&nbsp; Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience.<\/p>\n<div>\n<table border=\"0\" cellspacing=\"0\" cellpadding=\"1\" class=\"prnbcc\">\n<tbody readability=\"2\">\n<tr readability=\"3\">\n<td class=\"prngen2\" colspan=\"1\" rowspan=\"1\" readability=\"5\">\n<p class=\"prnml4\"><span class=\"prnews_span\">* Sequential Read\/Write: speed to read and write data of a file sequentially<\/span><\/p>\n<\/td>\n<\/tr>\n<tr readability=\"3\">\n<td class=\"prngen2\" colspan=\"1\" rowspan=\"1\" readability=\"5\">\n<p class=\"prnml4\"><span class=\"prnews_span\">* Random Read\/Write: speed to read and write data of dispersed files<\/span><\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<p>SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types \u2013 <span id=\"spanHghlt33c3\">512GB<\/span> and 1TB.<\/p>\n<p><span class=\"xn-person\">Ahn Hyun<\/span>, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. &#8220;We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge.&#8221;<\/p>\n<p><b>About SK hynix Inc.<\/b><\/p>\n<p>SK hynix Inc., headquartered in Korea, is the world&#8217;s top tier semiconductor supplier offering Dynamic Random Access Memory chips (&#8220;DRAM&#8221;) and flash memory chips (&#8220;NAND&nbsp;flash&#8221;)&nbsp;for a wide range of distinguished customers globally. The Company&#8217;s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at <a href=\"https:\/\/www.skhynix.com\/eng\/main.do\" target=\"_blank\" rel=\"nofollow noopener\">www.skhynix.com<\/a>, <a href=\"https:\/\/news.skhynix.com\/\" target=\"_blank\" rel=\"nofollow noopener\">news.skhynix.com<\/a>.<\/p>\n<\/p><\/div>\n<p>Source: SK hynix Inc.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Optimized for on-device AI with best-in-class sequential reading performance, low power requirement Thickness reduced by 15% to fit into ultra-slim flagship smartphones Portfolio with world&#8217;s highest 321-layer product to enhance SK hynix&#8217;s leadership as full stack AI memory provider SEOUL, South Korea, May 22, 2025 \/PRNewswire\/ &#8212; SK hynix Inc. (or &#8220;the company&#8221;, www.skhynix.com) announced [&hellip;]<\/p>\n","protected":false},"author":8,"featured_media":36635,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[20],"tags":[],"class_list":["post-36634","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-business-news"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>SK hynix Develops UFS 4.1 Solution Based on 321-High NAND - My Blog<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/transmediavictoria.net.au\/?p=36634\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"SK hynix Develops UFS 4.1 Solution Based on 321-High NAND - My Blog\" \/>\n<meta property=\"og:description\" content=\"Optimized for on-device AI with best-in-class sequential reading performance, low power requirement Thickness reduced by 15% to fit into ultra-slim flagship smartphones Portfolio with world&#8217;s highest 321-layer product to enhance SK hynix&#8217;s leadership as full stack AI memory provider SEOUL, South Korea, May 22, 2025 \/PRNewswire\/ &#8212; SK hynix Inc. 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